Transistors

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Records 64,903

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Part Number	Description	In Stock
SSM6N48FU,RF(D Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock7,074
SSM6N55NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4A UDFN6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	In Stock4,302
SSM6N56FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.8A Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock106,050
SSM6N57NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4A UDFN6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	In Stock25,812
SSM6N58NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4A UDFN6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock178,158
SSM6N61NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4A UDFN Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFNB (2x2)	In Stock5,670
SSM6N62TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock45,852
SSM6N67NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW RON DUAL NCH MOSFETS I Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock29,988
SSM6N68NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW RON DUAL NCH MOSFETS H Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock24,894
SSM6N7002BFE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock3,312
SSM6N7002BFE(T5L,F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock8,568
SSM6N7002BFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock2,916
SSM6N7002BFU(T5L,F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock4,428
SSM6N7002CFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.17A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock266,466
SSM6N7002KFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock666,396
SSM6N815R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 2A 6TSOPF Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.8W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	In Stock6,048
SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock68,556
SSM6P15FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock48,372
SSM6P35AFE,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock81,318
SSM6P35AFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock25,890
SSM6P35FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2NCH 20V 100MA ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock3,042
SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock35,268
SSM6P36FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.33A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock6,840
SSM6P36TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock55,446
SSM6P39TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,914
SSM6P40TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,888
SSM6P41FE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.72A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock34,788
SSM6P47NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 2-2Y1A Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock22,698
SSM6P49NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 2-1Y1A Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock24,612
SSM6P54TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS- Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,544

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