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NGTG30N60FWG

NGTG30N60FWG

For Reference Only

Part Number NGTG30N60FWG
PNEDA Part # NGTG30N60FWG
Description IGBT 600V 60A 167W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTG30N60FWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTG30N60FWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTG30N60FWG, NGTG30N60FWG Datasheet (Total Pages: 9, Size: 169.47 KB)
PDFNGTG30N60FWG Datasheet Cover
NGTG30N60FWG Datasheet Page 2 NGTG30N60FWG Datasheet Page 3 NGTG30N60FWG Datasheet Page 4 NGTG30N60FWG Datasheet Page 5 NGTG30N60FWG Datasheet Page 6 NGTG30N60FWG Datasheet Page 7 NGTG30N60FWG Datasheet Page 8 NGTG30N60FWG Datasheet Page 9

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NGTG30N60FWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 30A
Power - Max167W
Switching Energy650µJ (on), 650µJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C81ns/190ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 30A, 11Ohm, 15V

Reverse Recovery Time (trr)

125ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

630µJ (on), 1.39mJ (off)

Input Type

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Gate Charge

51nC

Td (on/off) @ 25°C

42ns/230ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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