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NGTG50N60FLWG

NGTG50N60FLWG

For Reference Only

Part Number NGTG50N60FLWG
PNEDA Part # NGTG50N60FLWG
Description IGBT 600V 50A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTG50N60FLWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTG50N60FLWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTG50N60FLWG, NGTG50N60FLWG Datasheet (Total Pages: 9, Size: 164.63 KB)
PDFNGTG50N60FLWG Datasheet Cover
NGTG50N60FLWG Datasheet Page 2 NGTG50N60FLWG Datasheet Page 3 NGTG50N60FLWG Datasheet Page 4 NGTG50N60FLWG Datasheet Page 5 NGTG50N60FLWG Datasheet Page 6 NGTG50N60FLWG Datasheet Page 7 NGTG50N60FLWG Datasheet Page 8 NGTG50N60FLWG Datasheet Page 9

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NGTG50N60FLWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 50A
Power - Max223W
Switching Energy1.1mJ (on), 600µJ (off)
Input TypeStandard
Gate Charge310nC
Td (on/off) @ 25°C116ns/292ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 39A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

45W

Switching Energy

470µJ (on), 270µJ (off)

Input Type

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Gate Charge

46nC

Td (on/off) @ 25°C

26ns/122ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

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Power - Max

325W

Switching Energy

2.9mJ (on), 1.4mJ (off)

Input Type

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Gate Charge

145nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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RJP5001APP-M0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

500V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

10V @ 12V, 300A

Power - Max

45W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

100ns/200ns

Test Condition

300V, 300A, 30Ohm, 12V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

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IRG7PG42UD-EPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

85A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

320W

Switching Energy

2.11mJ (on), 1.18mJ (off)

Input Type

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Gate Charge

157nC

Td (on/off) @ 25°C

25ns/229ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

153ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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