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DGTD120T40S1PT

DGTD120T40S1PT

For Reference Only

Part Number DGTD120T40S1PT
PNEDA Part # DGTD120T40S1PT
Description IGBT 1200V-X TO247 TUBE 0.45K
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DGTD120T40S1PT Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDGTD120T40S1PT
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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DGTD120T40S1PT Specifications

ManufacturerDiodes Incorporated
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Power - Max357W
Switching Energy1.96mJ (on), 540µJ (off)
Input TypeStandard
Gate Charge341nC
Td (on/off) @ 25°C65ns/308ns
Test Condition600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

164A

Current - Collector Pulsed (Icm)

320A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 82A

Power - Max

1040W

Switching Energy

4.95mJ (on), 2.78mJ (off)

Input Type

Standard

Gate Charge

215nC

Td (on/off) @ 25°C

29ns/192ns

Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

420ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

PLUS264™

APT50GR120L

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

117A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 50A

Power - Max

694W

Switching Energy

2.14mJ (on), 1.48mJ (off)

Input Type

Standard

Gate Charge

445nC

Td (on/off) @ 25°C

28ns/237ns

Test Condition

600V, 50A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

STGW10M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

M

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 10A

Power - Max

115W

Switching Energy

120µJ (on), 270µJ (off)

Input Type

Standard

Gate Charge

28nC

Td (on/off) @ 25°C

19ns/91ns

Test Condition

400V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

96ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

130A

Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 36A

Power - Max

600W

Switching Energy

1.3mJ (on), 370µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

22ns/80ns

Test Condition

400V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

120ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

SGR15N40LTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

130A

Vce(on) (Max) @ Vge, Ic

8V @ 4.5V, 130A

Power - Max

45W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

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