FGA15N120ANTDTU-F109
For Reference Only
| Part Number | FGA15N120ANTDTU-F109 |
| PNEDA Part # | FGA15N120ANTDTU-F109 |
| Description | IGBT 1200V 30A 186W TO3P |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 11,616 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FGA15N120ANTDTU-F109 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FGA15N120ANTDTU-F109 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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FGA15N120ANTDTU-F109 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 30A |
| Current - Collector Pulsed (Icm) | 45A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Power - Max | 186W |
| Switching Energy | 3mJ (on), 600µJ (off) |
| Input Type | Standard |
| Gate Charge | 120nC |
| Td (on/off) @ 25°C | 15ns/160ns |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 330ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A Power - Max 200W Switching Energy 370µJ (on), 2.1mJ (off) Input Type Standard Gate Charge 190nC Td (on/off) @ 25°C 31ns/240ns Test Condition 480V, 39A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
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