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FGA20S120M

FGA20S120M

For Reference Only

Part Number FGA20S120M
PNEDA Part # FGA20S120M
Description IGBT 1200V 40A 348W TO3PN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA20S120M Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA20S120M
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA20S120M, FGA20S120M Datasheet (Total Pages: 8, Size: 733.14 KB)
PDFFGA20S120M Datasheet Cover
FGA20S120M Datasheet Page 2 FGA20S120M Datasheet Page 3 FGA20S120M Datasheet Page 4 FGA20S120M Datasheet Page 5 FGA20S120M Datasheet Page 6 FGA20S120M Datasheet Page 7 FGA20S120M Datasheet Page 8

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FGA20S120M Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 20A
Power - Max348W
Switching Energy-
Input TypeStandard
Gate Charge208nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Manufacturer

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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