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APT15GP90BDQ1G

APT15GP90BDQ1G

For Reference Only

Part Number APT15GP90BDQ1G
PNEDA Part # APT15GP90BDQ1G
Description IGBT 900V 43A 250W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT15GP90BDQ1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT15GP90BDQ1G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT15GP90BDQ1G Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)43A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 15A
Power - Max250W
Switching Energy200µJ (off)
Input TypeStandard
Gate Charge60nC
Td (on/off) @ 25°C9ns/33ns
Test Condition600V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

160W

Switching Energy

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Input Type

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Gate Charge

98nC

Td (on/off) @ 25°C

27ns/100ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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IHW15N120R3FKSA1

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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