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APT100GN60B2G

APT100GN60B2G

For Reference Only

Part Number APT100GN60B2G
PNEDA Part # APT100GN60B2G
Description IGBT 600V 229A 625W TMAX
Manufacturer Microsemi
Unit Price
1 ---------- $99.5213
50 ---------- $94.8562
100 ---------- $90.1912
200 ---------- $85.5261
400 ---------- $81.6386
500 ---------- $77.7510
In Stock 42
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT100GN60B2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT100GN60B2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT100GN60B2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)229A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 100A
Power - Max625W
Switching Energy4.7mJ (on), 2.675mJ (off)
Input TypeStandard
Gate Charge600nC
Td (on/off) @ 25°C31ns/310ns
Test Condition400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 60A

Power - Max

540W

Switching Energy

1.4mJ (on), 3.5mJ (off)

Input Type

Standard

Gate Charge

230nC

Td (on/off) @ 25°C

31ns/320ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

Manufacturer

IXYS

Series

XPT™, GenX4™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

340A

Current - Collector Pulsed (Icm)

840A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 120A

Power - Max

1200W

Switching Energy

5.75mJ (on), 2.67mJ (off)

Input Type

Standard

Gate Charge

250nC

Td (on/off) @ 25°C

54ns/270ns

Test Condition

400V, 100A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

105ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 60A

Power - Max

750W

Switching Energy

1.7mJ (on), 1.5mJ (off)

Input Type

Standard

Gate Charge

107nC

Td (on/off) @ 25°C

35ns/118ns

Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

IRG4BC20KPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Power - Max

60W

Switching Energy

150µJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

28ns/150ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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