Transistors

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Records 64,903

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Part Number	Description	In Stock
TK25A60X5,S5X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock8,550
TK25A60X,S5X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-3PN Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,866
TK25E06K3,S1X(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 25A TO-220AB Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 18mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock3,078
TK25E60X5,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220AB Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,758
TK25E60X,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220AB Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,794
TK25N60X5,S1F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock5,544
TK25N60X,S1F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,180
TK25V60X,LQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 135mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	In Stock2,736
TK28A65W,S5X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 27.6A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock8,676
TK28N65W,S1F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 27.6A TO247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,092
TK290A60Y,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11.5A TO220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,684
TK290A65Y,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11.5A TO220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock8,136
TK290P60Y,RQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11.5A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock18,264
TK290P65Y,RQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11.5A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,182
TK2A65D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 2A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,570
TK2P60D(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,472
TK2Q60D(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PW-MOLD2 Package / Case: TO-251-3 Stub Leads, IPak	In Stock2,898
TK30A06N1,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock19,260
TK30E06N1,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 43A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V FET Feature: - Power Dissipation (Max): 53W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,586
TK30S06K3L(T6L1,NQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A DPAK-3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,626
TK31A60W,S4VX Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30.8A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,092
TK31E60W,S1VX Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 30.8A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock4,392
TK31E60X,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30.8A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock5,310
TK31J60W5,S1VQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30.8A TO-3P(N) Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	In Stock2,088
TK31J60W,S1VQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 30.8A TO-3P(N) Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	In Stock8,298
TK31N60W5,S1VF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30.8A TO-247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock22,656
TK31N60W,S1VF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 30.8A TO247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,154
TK31N60X,S1F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30.8A TO-247 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,336
TK31V60W5,LVQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N -CH 600V 30.8A DFN Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	In Stock24,174
TK31V60W,LVQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 30.8A 5DFN Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 240W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	In Stock2,394

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