Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TK2P60D(TE16L1,NQ)

TK2P60D(TE16L1,NQ)

For Reference Only

Part Number TK2P60D(TE16L1,NQ)
PNEDA Part # TK2P60D-TE16L1-NQ
Description MOSFET N-CH 600V 2A PW-MOLD
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK2P60D(TE16L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK2P60D(TE16L1,NQ)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TK2P60D(TE16L1,NQ) Datasheet
  • where to find TK2P60D(TE16L1,NQ)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TK2P60D(TE16L1,NQ)
  • TK2P60D(TE16L1,NQ) PDF Datasheet
  • TK2P60D(TE16L1,NQ) Stock

  • TK2P60D(TE16L1,NQ) Pinout
  • Datasheet TK2P60D(TE16L1,NQ)
  • TK2P60D(TE16L1,NQ) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TK2P60D(TE16L1,NQ) Price
  • TK2P60D(TE16L1,NQ) Distributor

TK2P60D(TE16L1 Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSVII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePW-MOLD
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FQPF4N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

NTMFS4C09NT1G-001

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1252pF @ 15V

FET Feature

-

Power Dissipation (Max)

760mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

IRLU3802PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

84A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 4.5V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2490pF @ 6V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

157nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

694W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS-220SMD

Package / Case

PLUS-220SMD

IPA90R1K2C3XKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

ESD9L5.0ST5G

ESD9L5.0ST5G

ON Semiconductor

TVS DIODE 5V 9.8V SOD923

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

MC7808CDTG

MC7808CDTG

ON Semiconductor

IC REG LINEAR 8V 1A DPAK

LT8609SEV#PBF

LT8609SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16LQFN

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

SMBJ12A

SMBJ12A

TVS DIODE 12V 19.9V SMB

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC