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TK25E06K3,S1X(S

TK25E06K3,S1X(S

For Reference Only

Part Number TK25E06K3,S1X(S
PNEDA Part # TK25E06K3-S1X-S
Description MOSFET N-CH 60V 25A TO-220AB
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK25E06K3 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK25E06K3,S1X(S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TK25E06K3, TK25E06K3 Datasheet (Total Pages: 63, Size: 1,617.96 KB)
PDFTPCP8203(TE85L Datasheet Cover
TPCP8203(TE85L Datasheet Page 2 TPCP8203(TE85L Datasheet Page 3 TPCP8203(TE85L Datasheet Page 4 TPCP8203(TE85L Datasheet Page 5 TPCP8203(TE85L Datasheet Page 6 TPCP8203(TE85L Datasheet Page 7 TPCP8203(TE85L Datasheet Page 8 TPCP8203(TE85L Datasheet Page 9 TPCP8203(TE85L Datasheet Page 10 TPCP8203(TE85L Datasheet Page 11

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TK25E06K3 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs18mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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