TK28N65W,S1F
For Reference Only
Part Number | TK28N65W,S1F |
PNEDA Part # | TK28N65W-S1F |
Description | MOSFET N-CH 650V 27.6A TO247 |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 7,092 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TK28N65W Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | TK28N65W,S1F |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TK28N65W Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 27.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 13.8A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.6mA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
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