Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 1904/2164
Image
Part Number
Description
In Stock
Quantity
TK3R1P04PL,RQ
TK3R1P04PL,RQ

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 40V 58A DPAK

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSIX-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock24,660
TK40A06N1,S4X
TK40A06N1,S4X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 60A TO220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock6,240
TK40A10N1,S4X
TK40A10N1,S4X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 40A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock11,868
TK40E06N1,S1X
TK40E06N1,S1X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 40A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 67W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock4,590
TK40E10K3,S1X(S
TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 40A TO-220AB

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSIV
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
In Stock5,616
TK40E10N1,S1X
TK40E10N1,S1X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 100V 90A TO220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 126W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock6,312
TK40P03M1(T6RDS-Q)
TK40P03M1(T6RDS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVI-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,842
TK40P03M1(T6RSS-Q)
TK40P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A 3DP 2-7K1A

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVI-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DP
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,258
TK40P04M1(T6RSS-Q)
TK40P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 40A 3DP 2-7K1A

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVI-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DP
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,832
TK40S10K3Z(T6L1,NQ
TK40S10K3Z(T6L1,NQ

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 40A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSIV
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,940
TK42A12N1,S4X
TK42A12N1,S4X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 120V 42A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock15,912
TK42E12N1,S1X
TK42E12N1,S1X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N CH 120V 88A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock6,624
TK45P03M1,RQ(S
TK45P03M1,RQ(S

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 45A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVI-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,734
TK46A08N1,S4X
TK46A08N1,S4X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 46A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock3,582
TK46E08N1,S1X
TK46E08N1,S1X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 80A TO-220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSVIII-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock6,444
TK4A50D(STA4,Q,M)
TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 4A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock7,974
TK4A53D(STA4,Q,M)
TK4A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 525V 4A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock5,760
TK4A55DA(STA4,Q,M)
TK4A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 3.5A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.45Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock8,370
TK4A55D(STA4,Q,M)
TK4A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 4A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.88Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock5,706
TK4A60DA(STA4,Q,M)
TK4A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.5A TO220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock2,016
TK4A60DB(STA4,Q,M)
TK4A60DB(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.7A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock5,850
TK4A60D(STA4,Q,M)
TK4A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock6,390
TK4A65DA(STA4,Q,M)
TK4A65DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 3.5A TO-220SIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock7,272
TK4P50D(T6RSS-Q)
TK4P50D(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 4A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,210
TK4P55DA(T6RSS-Q)
TK4P55DA(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 3.5A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.45Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,960
TK4P55D(T6RSS-Q)
TK4P55D(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 4A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.88Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,114
TK4P60DA(T6RSS-Q)
TK4P60DA(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.5A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,256
TK4P60DB(T6RSS-Q)
TK4P60DB(T6RSS-Q)

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.7A DPAK-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: π-MOSVII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,028
TK4R3A06PL,S4X
TK4R3A06PL,S4X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

X35 PB-F POWER MOSFET TRANSISTOR

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSIX-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
In Stock12,972
TK4R3E06PL,S1X
TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

X35 PB-F POWER MOSFET TRANSISTOR

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: U-MOSIX-H
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock17,622