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TK31V60W,LVQ

TK31V60W,LVQ

For Reference Only

Part Number TK31V60W,LVQ
PNEDA Part # TK31V60W-LVQ
Description MOSFET N CH 600V 30.8A 5DFN
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK31V60W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK31V60W,LVQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK31V60W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs98mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)240W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DFN-EP (8x8)
Package / Case4-VSFN Exposed Pad

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