Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1849/2164

Part Number	Description	In Stock
STH240N75F3-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 180A H2PAK Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock18,600
STH245N75F3-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock2,754
STH250N55F3-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock5,256
STH250N6F3-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 250A H2PAK Manufacturer: STMicroelectronics Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,454
STH260N6F6-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A H2PAK Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,138
STH260N6F6-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock8,496
STH265N6F6-2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,274
STH265N6F6-6AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock2,466
STH270N4F3-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant	In Stock7,974
STH270N4F3-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,816
STH270N8F7-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant	In Stock2,322
STH270N8F7-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock4,626
STH272N6F7-6AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V FET Feature: - Power Dissipation (Max): 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,462
STH275N8F7-2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,320
STH275N8F7-6AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock4,320
STH290N4F6-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V H2PAK-2 Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,912
STH290N4F6-2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,502
STH290N4F6-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V H2PAK-6 Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,004
STH290N4F6-6AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock7,344
STH300NH02L-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 15V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock7,056
STH310N10F7-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,986
STH310N10F7-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock7,992
STH315N10F7-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,840
STH315N10F7-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock4,446
STH320N4F6-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 200A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 15V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant	In Stock3,508
STH320N4F6-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 200A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 15V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock8,514
STH360N4F6-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17930pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,006
STH3N150-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A H2PAK-2 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant	In Stock46,782
STH400N4F6-2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-2 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 404nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,568
STH400N4F6-6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A H2PAK-6 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 404nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,834

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