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STH310N10F7-6

STH310N10F7-6

For Reference Only

Part Number STH310N10F7-6
PNEDA Part # STH310N10F7-6
Description MOSFET N-CH 100V 180A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH310N10F7-6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH310N10F7-6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH310N10F7-6, STH310N10F7-6 Datasheet (Total Pages: 19, Size: 682.75 KB)
PDFSTH310N10F7-2 Datasheet Cover
STH310N10F7-2 Datasheet Page 2 STH310N10F7-2 Datasheet Page 3 STH310N10F7-2 Datasheet Page 4 STH310N10F7-2 Datasheet Page 5 STH310N10F7-2 Datasheet Page 6 STH310N10F7-2 Datasheet Page 7 STH310N10F7-2 Datasheet Page 8 STH310N10F7-2 Datasheet Page 9 STH310N10F7-2 Datasheet Page 10 STH310N10F7-2 Datasheet Page 11

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STH310N10F7-6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12800pF @ 25V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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