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STH275N8F7-6AG

STH275N8F7-6AG

For Reference Only

Part Number STH275N8F7-6AG
PNEDA Part # STH275N8F7-6AG
Description MOSFET N-CH 80V 180A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH275N8F7-6AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH275N8F7-6AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH275N8F7-6AG, STH275N8F7-6AG Datasheet (Total Pages: 18, Size: 883.38 KB)
PDFSTH275N8F7-2AG Datasheet Cover
STH275N8F7-2AG Datasheet Page 2 STH275N8F7-2AG Datasheet Page 3 STH275N8F7-2AG Datasheet Page 4 STH275N8F7-2AG Datasheet Page 5 STH275N8F7-2AG Datasheet Page 6 STH275N8F7-2AG Datasheet Page 7 STH275N8F7-2AG Datasheet Page 8 STH275N8F7-2AG Datasheet Page 9 STH275N8F7-2AG Datasheet Page 10 STH275N8F7-2AG Datasheet Page 11

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STH275N8F7-6AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs193nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13600pF @ 50V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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