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STH260N6F6-6

STH260N6F6-6

For Reference Only

Part Number STH260N6F6-6
PNEDA Part # STH260N6F6-6
Description MOSFET N-CH 60V 180A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH260N6F6-6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH260N6F6-6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH260N6F6-6, STH260N6F6-6 Datasheet (Total Pages: 13, Size: 811.52 KB)
PDFSTH260N6F6-6 Datasheet Cover
STH260N6F6-6 Datasheet Page 2 STH260N6F6-6 Datasheet Page 3 STH260N6F6-6 Datasheet Page 4 STH260N6F6-6 Datasheet Page 5 STH260N6F6-6 Datasheet Page 6 STH260N6F6-6 Datasheet Page 7 STH260N6F6-6 Datasheet Page 8 STH260N6F6-6 Datasheet Page 9 STH260N6F6-6 Datasheet Page 10 STH260N6F6-6 Datasheet Page 11

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STH260N6F6-6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs183nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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