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STH315N10F7-6

STH315N10F7-6

For Reference Only

Part Number STH315N10F7-6
PNEDA Part # STH315N10F7-6
Description MOSFET N-CH 100V 180A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH315N10F7-6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH315N10F7-6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH315N10F7-6, STH315N10F7-6 Datasheet (Total Pages: 19, Size: 1,140.4 KB)
PDFSTH315N10F7-6 Datasheet Cover
STH315N10F7-6 Datasheet Page 2 STH315N10F7-6 Datasheet Page 3 STH315N10F7-6 Datasheet Page 4 STH315N10F7-6 Datasheet Page 5 STH315N10F7-6 Datasheet Page 6 STH315N10F7-6 Datasheet Page 7 STH315N10F7-6 Datasheet Page 8 STH315N10F7-6 Datasheet Page 9 STH315N10F7-6 Datasheet Page 10 STH315N10F7-6 Datasheet Page 11

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STH315N10F7-6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12800pF @ 25V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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