Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 1847/2164

Part Number	Description	In Stock
STFILED627 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 7A I2PAK Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 50V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I²Pak	In Stock6,480
STFU10N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock4,896
STFU10NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock7,200
STFU13N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-220FP Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,448
STFU13N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock12,342
STFU13N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock36,138
STFU15N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,856
STFU15NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,616
STFU16N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock13,758
STFU18N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-220FP Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,230
STFU18N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock18,672
STFU23N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock4,698
STFU24N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock5,508
STFU28N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20A Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock7,632
STFU6N65 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 650 V, 1.2 OHM TYP., 4 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 25V FET Feature: - Power Dissipation (Max): 620mW (Ta), 77W (Tc) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock17,112
STFU9N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock2,106
STFV3N150 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A TO-220FH Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock4,302
STFV4N150 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 4A TO-220FH Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock3,454
STFW12N120K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 12A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock3,726
STFW1N105K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 1.4A TO3PF Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 100V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock7,074
STFW20N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 18A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ M5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock7,362
STFW24N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3PF	In Stock5,022
STFW24NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-3PH Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,470
STFW2N105K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 2A TO-3PF Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock7,038
STFW38N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock2,664
STFW3N150 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A TO3PF Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock14,562
STFW3N170 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1700V 2.6A Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock8,244
STFW40N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock6,966
STFW42N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock4,626
STFW45N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 35A TO-3PF Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOWATT-218FX Package / Case: ISOWATT218FX	In Stock2,772

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