Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1696/2164

Part Number	Description	In Stock
RQ6E055BNTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.5A TSMT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 15V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,500
RQ6E060ATTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RQ6E060AT IS LOW ON-RESISTANCE M Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V FET Feature: - Power Dissipation (Max): 950mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock6,516
RQ6E080AJTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RQ6E080AJ IS LOW ON - RESISTANCE Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 16.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 15V FET Feature: - Power Dissipation (Max): 950mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,338
RQ6E085BNTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 30V 8.5A MIDDLE POWER MOSFET Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V FET Feature: - Power Dissipation (Max): 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-457 Package / Case: SC-74, SOT-457	In Stock7,236
RQ6L020SPTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RQ6L020SP IS A MOSFET WITH LOW O Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock47,568
RQ6P015SPTR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1.5A TSMT Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock213,462
RQ7E055ATTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single PCH -30V -5.5A MIDDLE POWER MOSF Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	In Stock42,432
RQ7E110AJTCR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 30V 11A MIDDLE POWER MOSFET Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V Vgs(th) (Max) @ Id: 1.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	In Stock4,968
RQA0002DNSTB-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH HWSON2 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 2-HWSON (5x4) Package / Case: 3-DFN Exposed Pad	In Stock8,928
RQA0004PXDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock5,184
RQA0005QXDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 9W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock3,006
RQA0009SXAQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock8,712
RQA0009TXDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock3,762
RQA0011DNS#G0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH HWSON2 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 2-HWSON (5x4) Package / Case: 3-DFN Exposed Pad	In Stock8,280
RQHC6140-6DWA#W0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,246
RQJ0303PGDQA#H6 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.3A 3MPAK Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MPAK Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,856
RQJ0305EQDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Vgs (Max): +8V, -12V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock5,472
RQK0607AQDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock2,124
RQK0609CQDQS#H1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH UPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	In Stock8,622
RRF015P03GTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A TUMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock8,766
RRF015P03TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A TUMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock8,766
RRH040P03TB1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A SOP8 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,886
RRH050P03GZETB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A 8SOIC Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,142
RRH050P03TB1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A SOP8 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,550
RRH075P03TB1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.5A SOP8 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,192
RRH090P03GZETB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MIDDLE POWER MOSFET SERIES (SING Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock20,292
RRH090P03TB1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8SOIC Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,586
RRH100P03GZETB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10A SOP8 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock26,346
RRH100P03TB1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10A SOP8 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,784
RRH140P03GZETB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 14A 8SOP Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V FET Feature: - Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,754

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