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RQA0004PXDQS#H1

RQA0004PXDQS#H1

For Reference Only

Part Number RQA0004PXDQS#H1
PNEDA Part # RQA0004PXDQS-H1
Description MOSFET N-CH UPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQA0004PXDQS#H1 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQA0004PXDQS#H1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQA0004PXDQS#H1, RQA0004PXDQS#H1 Datasheet (Total Pages: 19, Size: 170.7 KB)
PDFRQA0004PXDQS#H1 Datasheet Cover
RQA0004PXDQS#H1 Datasheet Page 2 RQA0004PXDQS#H1 Datasheet Page 3 RQA0004PXDQS#H1 Datasheet Page 4 RQA0004PXDQS#H1 Datasheet Page 5 RQA0004PXDQS#H1 Datasheet Page 6 RQA0004PXDQS#H1 Datasheet Page 7 RQA0004PXDQS#H1 Datasheet Page 8 RQA0004PXDQS#H1 Datasheet Page 9 RQA0004PXDQS#H1 Datasheet Page 10 RQA0004PXDQS#H1 Datasheet Page 11

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RQA0004PXDQS#H1 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageUPAK
Package / CaseTO-243AA

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