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RQJ0305EQDQS#H1

RQJ0305EQDQS#H1

For Reference Only

Part Number RQJ0305EQDQS#H1
PNEDA Part # RQJ0305EQDQS-H1
Description MOSFET P-CH UPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQJ0305EQDQS#H1 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQJ0305EQDQS#H1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQJ0305EQDQS#H1, RQJ0305EQDQS#H1 Datasheet (Total Pages: 10, Size: 119.61 KB)
PDFRQJ0305EQDQS#H1 Datasheet Cover
RQJ0305EQDQS#H1 Datasheet Page 2 RQJ0305EQDQS#H1 Datasheet Page 3 RQJ0305EQDQS#H1 Datasheet Page 4 RQJ0305EQDQS#H1 Datasheet Page 5 RQJ0305EQDQS#H1 Datasheet Page 6 RQJ0305EQDQS#H1 Datasheet Page 7 RQJ0305EQDQS#H1 Datasheet Page 8 RQJ0305EQDQS#H1 Datasheet Page 9 RQJ0305EQDQS#H1 Datasheet Page 10

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RQJ0305EQDQS#H1 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Vgs (Max)+8V, -12V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageUPAK
Package / CaseTO-243AA

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