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RQA0002DNSTB-E

RQA0002DNSTB-E

For Reference Only

Part Number RQA0002DNSTB-E
PNEDA Part # RQA0002DNSTB-E
Description MOSFET N-CH HWSON2
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,928
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQA0002DNSTB-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQA0002DNSTB-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQA0002DNSTB-E, RQA0002DNSTB-E Datasheet (Total Pages: 18, Size: 183.74 KB)
PDFRQA0002DNSTB-E Datasheet Cover
RQA0002DNSTB-E Datasheet Page 2 RQA0002DNSTB-E Datasheet Page 3 RQA0002DNSTB-E Datasheet Page 4 RQA0002DNSTB-E Datasheet Page 5 RQA0002DNSTB-E Datasheet Page 6 RQA0002DNSTB-E Datasheet Page 7 RQA0002DNSTB-E Datasheet Page 8 RQA0002DNSTB-E Datasheet Page 9 RQA0002DNSTB-E Datasheet Page 10 RQA0002DNSTB-E Datasheet Page 11

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RQA0002DNSTB-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package2-HWSON (5x4)
Package / Case3-DFN Exposed Pad

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