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RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

For Reference Only

Part Number RQJ0303PGDQA#H6
PNEDA Part # RQJ0303PGDQA-H6
Description MOSFET P-CH 30V 3.3A 3MPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQJ0303PGDQA#H6 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQJ0303PGDQA#H6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQJ0303PGDQA#H6, RQJ0303PGDQA#H6 Datasheet (Total Pages: 8, Size: 167.17 KB)
PDFRQJ0303PGDQA#H6 Datasheet Cover
RQJ0303PGDQA#H6 Datasheet Page 2 RQJ0303PGDQA#H6 Datasheet Page 3 RQJ0303PGDQA#H6 Datasheet Page 4 RQJ0303PGDQA#H6 Datasheet Page 5 RQJ0303PGDQA#H6 Datasheet Page 6 RQJ0303PGDQA#H6 Datasheet Page 7 RQJ0303PGDQA#H6 Datasheet Page 8

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RQJ0303PGDQA#H6 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs68mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds625pF @ 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-MPAK
Package / CaseTO-236-3, SC-59, SOT-23-3

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