RQJ0303PGDQA#H6
For Reference Only
| Part Number | RQJ0303PGDQA#H6 |
| PNEDA Part # | RQJ0303PGDQA-H6 |
| Description | MOSFET P-CH 30V 3.3A 3MPAK |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 8,856 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RQJ0303PGDQA#H6 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | RQJ0303PGDQA#H6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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RQJ0303PGDQA#H6 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1.6A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Vgs (Max) | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-MPAK |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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