Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RQA0005QXDQS#H1

RQA0005QXDQS#H1

For Reference Only

Part Number RQA0005QXDQS#H1
PNEDA Part # RQA0005QXDQS-H1
Description MOSFET N-CH UPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQA0005QXDQS#H1 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQA0005QXDQS#H1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQA0005QXDQS#H1, RQA0005QXDQS#H1 Datasheet (Total Pages: 15, Size: 203.07 KB)
PDFRQA0005QXDQS#H1 Datasheet Cover
RQA0005QXDQS#H1 Datasheet Page 2 RQA0005QXDQS#H1 Datasheet Page 3 RQA0005QXDQS#H1 Datasheet Page 4 RQA0005QXDQS#H1 Datasheet Page 5 RQA0005QXDQS#H1 Datasheet Page 6 RQA0005QXDQS#H1 Datasheet Page 7 RQA0005QXDQS#H1 Datasheet Page 8 RQA0005QXDQS#H1 Datasheet Page 9 RQA0005QXDQS#H1 Datasheet Page 10 RQA0005QXDQS#H1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RQA0005QXDQS#H1 Datasheet
  • where to find RQA0005QXDQS#H1
  • Renesas Electronics America

  • Renesas Electronics America RQA0005QXDQS#H1
  • RQA0005QXDQS#H1 PDF Datasheet
  • RQA0005QXDQS#H1 Stock

  • RQA0005QXDQS#H1 Pinout
  • Datasheet RQA0005QXDQS#H1
  • RQA0005QXDQS#H1 Supplier

  • Renesas Electronics America Distributor
  • RQA0005QXDQS#H1 Price
  • RQA0005QXDQS#H1 Distributor

RQA0005QXDQS#H1 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)9W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageUPAK
Package / CaseTO-243AA

The Products You May Be Interested In

STP3NB100

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

EFC4612R-TR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

45mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EFCP1313-4CC-037

Package / Case

4-XFBGA

TK11P65W,RQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 300V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STI6N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRF3315LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

MAX3045BESE+

MAX3045BESE+

Maxim Integrated

IC DRIVER 4/0 16SO

IHLP2525AHER1R0M01

IHLP2525AHER1R0M01

Vishay Dale

FIXED IND 1UH 7A 18.3 MOHM SMD

HSMF-C165

HSMF-C165

Broadcom

LED GREEN/RED DIFFUSED 0603 SMD

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD

NC7SV125P5X

NC7SV125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

MMSZ4683T1G

MMSZ4683T1G

ON Semiconductor

DIODE ZENER 3V 500MW SOD123

ATTINY816-MN

ATTINY816-MN

Microchip Technology

IC MCU 8BIT 8KB FLASH 20QFN

4TPE220MAZB

4TPE220MAZB

Panasonic Electronic Components

CAP TANT POLY 220UF 4V 1411

PIC32MX340F512H-80I/PT

PIC32MX340F512H-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 64TQFP

MF-USMF050-2

MF-USMF050-2

Bourns

PTC RESET FUSE 13.2V 500MA 1210

KSR223GLFG

KSR223GLFG

C&K

SWITCH TACTILE SPST-NO 0.01A 32V