Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1614/2164

Part Number	Description	In Stock
NTMS4939NR2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,002
NTMS4N01R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.3A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V FET Feature: - Power Dissipation (Max): 770mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,330
NTMS4P01R2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3.4A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 9.6V FET Feature: - Power Dissipation (Max): 790mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,348
NTMS5835NLR2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 9.2A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,168
NTMS5838NLR2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 7.5A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,438
NTMS5P02R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.95A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V FET Feature: - Power Dissipation (Max): 790mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,424
NTMS5P02R2SG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.95A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V FET Feature: - Power Dissipation (Max): 790mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,698
NTMS7N03R2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.8A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,118
NTMS7N03R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.8A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock24,324
NTMSD2P102LR2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,614
NTMSD2P102LR2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,100
NTMSD2P102R2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,014
NTMSD2P102R2SG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,910
NTMSD3P102R2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.34A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 730mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,100
NTMSD3P102R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.34A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 730mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,922
NTMSD3P102R2SG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.34A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 730mW (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,136
NTMSD3P303R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.34A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 730mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,952
NTMSD6N303R2 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,244
NTMSD6N303R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,166
NTMSD6N303R2SG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8-SOIC Manufacturer: ON Semiconductor Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,906
NTMTS001N06CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V LL PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 398.2A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V FET Feature: - Power Dissipation (Max): 5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,906
NTMTS001N06CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V SG PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Ta), 244W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock5,886
NTMTS0D4N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,484
NTMTS0D4N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,798
NTMTS0D6N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 554.5A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16013pF @ 20V FET Feature: - Power Dissipation (Max): 5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,622
NTMTS0D6N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V SG PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 20V FET Feature: - Power Dissipation (Max): 5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,736
NTMTS0D7N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,174
NTMTS0D7N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,286
NTMTS0D7N06CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,618
NTMTS0D7N06CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8PQFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,204

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