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NTMSD6N303R2

NTMSD6N303R2

For Reference Only

Part Number NTMSD6N303R2
PNEDA Part # NTMSD6N303R2
Description MOSFET N-CH 30V 6A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMSD6N303R2 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMSD6N303R2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMSD6N303R2, NTMSD6N303R2 Datasheet (Total Pages: 11, Size: 147.79 KB)
PDFNTMSD6N303R2SG Datasheet Cover
NTMSD6N303R2SG Datasheet Page 2 NTMSD6N303R2SG Datasheet Page 3 NTMSD6N303R2SG Datasheet Page 4 NTMSD6N303R2SG Datasheet Page 5 NTMSD6N303R2SG Datasheet Page 6 NTMSD6N303R2SG Datasheet Page 7 NTMSD6N303R2SG Datasheet Page 8 NTMSD6N303R2SG Datasheet Page 9 NTMSD6N303R2SG Datasheet Page 10 NTMSD6N303R2SG Datasheet Page 11

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NTMSD6N303R2 Specifications

ManufacturerON Semiconductor
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 24V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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