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NTMS4N01R2G

NTMS4N01R2G

For Reference Only

Part Number NTMS4N01R2G
PNEDA Part # NTMS4N01R2G
Description MOSFET N-CH 20V 3.3A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMS4N01R2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMS4N01R2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS4N01R2G, NTMS4N01R2G Datasheet (Total Pages: 6, Size: 77.81 KB)
PDFNTMS4N01R2G Datasheet Cover
NTMS4N01R2G Datasheet Page 2 NTMS4N01R2G Datasheet Page 3 NTMS4N01R2G Datasheet Page 4 NTMS4N01R2G Datasheet Page 5 NTMS4N01R2G Datasheet Page 6

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NTMS4N01R2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
FET Feature-
Power Dissipation (Max)770mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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