Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1616/2164

Part Number	Description	In Stock
NTP13N10 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 64.7W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,146
NTP13N10G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 64.7W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,994
NTP150N65S3HF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 540µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 400V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock18,684
NTP18N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,636
NTP18N06G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,232
NTP18N06L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,050
NTP18N06LG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,786
NTP190N65S3HF ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V FRFET,190M Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 400V FET Feature: - Power Dissipation (Max): 162W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock8,568
NTP22N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,676
NTP22N06L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 65mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,222
NTP27N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,156
NTP27N06G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,770
NTP27N06L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 48mOhm @ 13.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,572
NTP2955 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.4A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,222
NTP2955G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.4A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock18,084
NTP30N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,678
NTP30N06L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,258
NTP30N06LG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,262
NTP30N20G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,536
NTP35N15G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 37A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,622
NTP4302 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 74A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,994
NTP4302G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 74A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,328
NTP45N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,428
NTP45N06G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,268
NTP45N06L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,652
NTP45N06LG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,920
NTP4813NLG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A TO220 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 11.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 12V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,862
NTP52N10 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,794
NTP52N10G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,142
NTP5404NRG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 136A TO220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 167A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 32V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 254W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,654

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