Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1612/2164

Part Number	Description	In Stock
NTMFS5H431NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 40V LOW COSS Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 20V FET Feature: - Power Dissipation (Max): 3W (Ta), 66W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,896
NTMFS5H600NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 60V MOSFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 30V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,268
NTMFS5H600NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 35A 250A 5DFN Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 30V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock8,406
NTMFS5H610NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 60V LOW COSS Manufacturer: ON Semiconductor Series: #3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 43W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,466
NTMFS5H615NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 60V LOW COSS Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 49A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,626
NTMFS5H630NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6DFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,680
NTMFS6B03NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 19A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 165W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock3,636
NTMFS6B03NT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 19A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 165W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,790
NTMFS6B05NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 16A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 138W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock3,454
NTMFS6B05NT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 16A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 138W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,482
NTMFS6B14NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,482
NTMFS6B14NT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,550
NTMFS6D1N08HT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock5,724
NTMFS6H800NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 80V 224A Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,996
NTMFS6H800NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 8 80V NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 330µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,520
NTMFS6H801NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 8 80V NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock13,080
NTMFS6H818NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 8 80V NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock7,380
NTMFS6H836NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 40V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock5,742
NTMFS6H848NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V SG SO-8FL-U8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock8,982
NTMJS0D9N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock7,110
NTMJS1D0N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock8,406
NTMJS1D2N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock8,532
NTMJS1D3N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock7,254
NTMJS1D5N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 40V 185A Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,906
NTMJS1D6N06CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V LL LFPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock3,996
NTMJS1D7N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock7,920
NTMJS2D5N06CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 155A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 113A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock4,320
NTMKB4895NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A ICEPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1644pF @ 15V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-ICEPAK - B1 PAD (4.8x3.8) Package / Case: 4-ICEPAK	In Stock3,528
NTMKE4891NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 129A ICEPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 26.7A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9) Package / Case: 5-ICEPAK	In Stock8,262
NTMKE4892NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 126A ICEPAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 148A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9) Package / Case: 5-ICEPAK	In Stock4,734

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