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NTMSD3P303R2G

NTMSD3P303R2G

For Reference Only

Part Number NTMSD3P303R2G
PNEDA Part # NTMSD3P303R2G
Description MOSFET P-CH 30V 2.34A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMSD3P303R2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMSD3P303R2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMSD3P303R2G, NTMSD3P303R2G Datasheet (Total Pages: 9, Size: 202.65 KB)
PDFNTMSD3P303R2G Datasheet Cover
NTMSD3P303R2G Datasheet Page 2 NTMSD3P303R2G Datasheet Page 3 NTMSD3P303R2G Datasheet Page 4 NTMSD3P303R2G Datasheet Page 5 NTMSD3P303R2G Datasheet Page 6 NTMSD3P303R2G Datasheet Page 7 NTMSD3P303R2G Datasheet Page 8 NTMSD3P303R2G Datasheet Page 9

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NTMSD3P303R2G Specifications

ManufacturerON Semiconductor
SeriesFETKY™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 24V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)730mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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