IPP60R099P7XKSA1
For Reference Only
| Part Number | IPP60R099P7XKSA1 |
| PNEDA Part # | IPP60R099P7XKSA1 |
| Description | MOSFET N-CH 600V 31A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,716 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPP60R099P7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPP60R099P7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPP60R099P7XKSA1 Datasheet
- where to find IPP60R099P7XKSA1
- Infineon Technologies
- Infineon Technologies IPP60R099P7XKSA1
- IPP60R099P7XKSA1 PDF Datasheet
- IPP60R099P7XKSA1 Stock
- IPP60R099P7XKSA1 Pinout
- Datasheet IPP60R099P7XKSA1
- IPP60R099P7XKSA1 Supplier
- Infineon Technologies Distributor
- IPP60R099P7XKSA1 Price
- IPP60R099P7XKSA1 Distributor
IPP60R099P7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 530µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1952pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 117W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V FET Feature - Power Dissipation (Max) 3.6W (Ta), 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 3.6W (Ta), 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V FET Feature Super Junction Power Dissipation (Max) 130W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
