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IPP60R190E6XKSA1

IPP60R190E6XKSA1

For Reference Only

Part Number IPP60R190E6XKSA1
PNEDA Part # IPP60R190E6XKSA1
Description MOSFET N-CH 600V 20.2A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP60R190E6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP60R190E6XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP60R190E6XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 100V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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