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IPP60R099CPAAKSA1

IPP60R099CPAAKSA1

For Reference Only

Part Number IPP60R099CPAAKSA1
PNEDA Part # IPP60R099CPAAKSA1
Description MOSFET N-CH 600V 31A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP60R099CPAAKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP60R099CPAAKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP60R099CPAAKSA1, IPP60R099CPAAKSA1 Datasheet (Total Pages: 11, Size: 209.99 KB)
PDFIPP60R099CPAAKSA1 Datasheet Cover
IPP60R099CPAAKSA1 Datasheet Page 2 IPP60R099CPAAKSA1 Datasheet Page 3 IPP60R099CPAAKSA1 Datasheet Page 4 IPP60R099CPAAKSA1 Datasheet Page 5 IPP60R099CPAAKSA1 Datasheet Page 6 IPP60R099CPAAKSA1 Datasheet Page 7 IPP60R099CPAAKSA1 Datasheet Page 8 IPP60R099CPAAKSA1 Datasheet Page 9 IPP60R099CPAAKSA1 Datasheet Page 10 IPP60R099CPAAKSA1 Datasheet Page 11

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IPP60R099CPAAKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 100V
FET Feature-
Power Dissipation (Max)255W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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