Transistors

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Records 64,903

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Part Number	Description	In Stock
BSP318SL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.6A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,572
BSP320S E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock7,398
BSP320S E6433 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock2,682
BSP320SH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT223 Manufacturer: Infineon Technologies Series: SIPMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock39,054
BSP320SH6433XTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 7V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock7,470
BSP320SL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock5,364
BSP320SL6433HTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock7,866
BSP321PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 980MA SOT223 Manufacturer: Infineon Technologies Series: SIPMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Vgs(th) (Max) @ Id: 4V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 319pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock7,308
BSP321PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.98A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Vgs(th) (Max) @ Id: 4V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 319pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock2,754
BSP322PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock17,040
BSP322PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,770
BSP324 E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 170MA SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,860
BSP324H6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 170MA SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock7,488
BSP324L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 170MA SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock8,910
BSP372 E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±14V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock2,700
BSP372L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±14V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock8,964
BSP372NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock21,144
BSP373 E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock3,240
BSP373L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,554
BSP373NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.7A SOT-223 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 4V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,212
BSP603S2LHUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5.2A SOT-223 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,662
BSP612PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single SMALL SIGNAL+P-CH Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,916
BSP613P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock45,504
BSP613PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock64,758
BSP613PL6327HUSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.9A SOT-223 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock3,582
BSP615S2L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2.8A SOT-223 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock8,532
BSP615S2LHUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET SOT223-4 Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,244
BSP716NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 2.3A SOT223 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	In Stock4,482
BSP75GQTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT223 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 700mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock3,240
BSP75GQTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT223 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 700mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock2,520

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