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BSP373 E6327

BSP373 E6327

For Reference Only

Part Number BSP373 E6327
PNEDA Part # BSP373-E6327
Description MOSFET N-CH 100V 1.7A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP373 E6327 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP373 E6327
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP373 E6327, BSP373 E6327 Datasheet (Total Pages: 9, Size: 357.28 KB)
PDFBSP373L6327HTSA1 Datasheet Cover
BSP373L6327HTSA1 Datasheet Page 2 BSP373L6327HTSA1 Datasheet Page 3 BSP373L6327HTSA1 Datasheet Page 4 BSP373L6327HTSA1 Datasheet Page 5 BSP373L6327HTSA1 Datasheet Page 6 BSP373L6327HTSA1 Datasheet Page 7 BSP373L6327HTSA1 Datasheet Page 8 BSP373L6327HTSA1 Datasheet Page 9

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BSP373 E6327 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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