Transistors

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Records 64,903

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Part Number	Description	In Stock
BSS126 E6906 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,106
BSS126H6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,966
BSS126H6327XTSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,408
BSS126H6906XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock48,666
BSS126L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,502
BSS126L6906HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,200
BSS127 E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,518
BSS127H6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21MA SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,606
BSS127H6327XTSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock264,072
BSS127L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,596
BSS127S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.05A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.08nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 25V FET Feature: - Power Dissipation (Max): 610mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock348,996
BSS127SSN-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50MA SC59 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.08nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 25V FET Feature: - Power Dissipation (Max): 610mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,022
BSS131E6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V .11A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,038
BSS131H6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 0.11A SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock888,906
BSS131L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V .11A SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,394
BSS138 MICROSS/On Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 220MA DIE Manufacturer: MICROSS/On Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock5,526
BSS138 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 220MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,031,242
BSS138-13-F Diodes Incorporated	Transistors - FETs, MOSFETs - Single BSS FAMILY SOT23 T&R 10K Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,762
BSS138-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 200MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,520
BSS138-7-F Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 200MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock11,288,610
BSS138AKA/LF1R Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA TO236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.51nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V FET Feature: - Power Dissipation (Max): 1.06W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,028
BSS138AKAR Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.2A TO-236AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 0.51nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 30V FET Feature: - Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock55,854
BSS138BK,215 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO-236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,222,274
BSS138BKVL Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 360MA TO236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,690
BSS138BKW,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT323 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V FET Feature: - Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	In Stock617,436
BSS138BKW-BX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 320MA SC70 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V FET Feature: - Power Dissipation (Max): 830mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	In Stock8,784
BSS138-D87Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.22A SOT23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,976
BSS138-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 220MA SOT23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,114
BSS138K ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 220MA SOT-23-3 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 58pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,516,336
BSS138K-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 310MA SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23.2pF @ 25V FET Feature: - Power Dissipation (Max): 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock536,496

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