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BSP318SL6327HTSA1

BSP318SL6327HTSA1

For Reference Only

Part Number BSP318SL6327HTSA1
PNEDA Part # BSP318SL6327HTSA1
Description MOSFET N-CH 60V 2.6A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,572
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP318SL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP318SL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP318SL6327HTSA1, BSP318SL6327HTSA1 Datasheet (Total Pages: 9, Size: 354.52 KB)
PDFBSP318SL6327HTSA1 Datasheet Cover
BSP318SL6327HTSA1 Datasheet Page 2 BSP318SL6327HTSA1 Datasheet Page 3 BSP318SL6327HTSA1 Datasheet Page 4 BSP318SL6327HTSA1 Datasheet Page 5 BSP318SL6327HTSA1 Datasheet Page 6 BSP318SL6327HTSA1 Datasheet Page 7 BSP318SL6327HTSA1 Datasheet Page 8 BSP318SL6327HTSA1 Datasheet Page 9

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BSP318SL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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