BSP716NH6327XTSA1
For Reference Only
| Part Number | BSP716NH6327XTSA1 |
| PNEDA Part # | BSP716NH6327XTSA1 |
| Description | MOSFET N-CH 75V 2.3A SOT223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,482 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSP716NH6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSP716NH6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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BSP716NH6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 218µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 20V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1642pF @ 15V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package P-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
