Transistors

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Records 64,903

Page 1046/2164

Part Number	Description	In Stock
BSC014N04LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 32A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSO8 Package / Case: 8-PowerTDFN	In Stock38,280
BSC014N04LSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock47,886
BSC014N04LSTATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6020pF @ 20V FET Feature: - Power Dissipation (Max): 3W (Ta), 115W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock51,804
BSC014N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.8V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-17 Package / Case: 8-PowerTDFN	In Stock211,200
BSC014N06NSTATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8125pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock44,664
BSC014NE2LSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 33A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock297,756
BSC015NE2LS5IATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 33A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock4,644
BSC016N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock5,202
BSC016N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock5,112
BSC016N04LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,290
BSC016N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock4,752
BSC016N06NSTATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock40,146
BSC017N04NSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock38,490
BSC018N04LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,834
BSC018NE2LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,942
BSC018NE2LSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 29A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock5,256
BSC019N02KSGAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock4,716
BSC019N04LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 27A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock6,372
BSC019N04LSTATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,120
BSC019N04NSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,472
BSC019N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 74µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5.25nF @ 30V FET Feature: - Power Dissipation (Max): 136W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	In Stock2,070
BSC020N025S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8290pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,006
BSC020N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock612,744
BSC020N03LSGATMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single LV POWER MOS Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,776
BSC020N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock45,042
BSC021N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single TRENCH 40<-<100V Manufacturer: Infineon Technologies Series: OptiMOS™, StrongIRFET™ FET Type: - Technology: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	In Stock4,716
BSC022N03S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7490pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,362
BSC022N03SG Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8290pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,236
BSC022N04LS6ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single TRENCH <= 40V Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V FET Feature: - Power Dissipation (Max): 3W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,042
BSC022N04LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock7,074

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