Transistors

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Records 64,903

Page 1047/2164

Part Number	Description	In Stock
BSC024N025S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,794
BSC024NE2LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 25A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock3,312
BSC025N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock4,392
BSC025N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock6,534
BSC026N02KSGAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 52.7nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock2,466
BSC026N04LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 23A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock3,672
BSC026N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 23A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock205,344
BSC026NE2LS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 24A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock2,754
BSC027N03S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,276
BSC027N04LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock1,353,384
BSC027N06LS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.3V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 30V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock4,878
BSC027N10NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single TRENCH >=100V Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 50V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	In Stock8,694
BSC028N06LS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,866
BSC028N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 23A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock142,566
BSC028N06NSTATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock2,214
BSC029N025S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,454
BSC030N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,920
BSC030N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,436
BSC030N04NSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock6,750
BSC030N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock3,726
BSC030P03NS3GAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.1V @ 345µA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock1,129,608
BSC031N06NS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock4,752
BSC032N03S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,906
BSC032N03SG Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock8,406
BSC032N04LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 21A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock5,976
BSC032NE2LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 22A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock6,696
BSC034N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock3,078
BSC034N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.3V @ 41µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock6,048
BSC035N04LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock235,992
BSC035N10NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 50V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock3,258

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