Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

For Reference Only

Part Number BSC014NE2LSIATMA1
PNEDA Part # BSC014NE2LSIATMA1
Description MOSFET N-CH 25V 33A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 297,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC014NE2LSIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC014NE2LSIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC014NE2LSIATMA1 Datasheet
  • where to find BSC014NE2LSIATMA1
  • Infineon Technologies

  • Infineon Technologies BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 PDF Datasheet
  • BSC014NE2LSIATMA1 Stock

  • BSC014NE2LSIATMA1 Pinout
  • Datasheet BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC014NE2LSIATMA1 Price
  • BSC014NE2LSIATMA1 Distributor

BSC014NE2LSIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

The Products You May Be Interested In

DMN10H220LVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.87A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

220mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

401pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.67W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6

NTTFS4985NFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16.3A (Ta), 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2075pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.47W (Ta), 22.73W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

SSM3K7002BSU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17pF @ 25V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

USM

Package / Case

SC-70, SOT-323

TSM60N600CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

743pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

IRF3717TRPBF-1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

CAY10-330J4LF

CAY10-330J4LF

Bourns

RES ARRAY 4 RES 33 OHM 0804

DS1500WE+

DS1500WE+

Maxim Integrated

IC RTC CLK/CALENDAR PAR 32-TSOP

MAX3237EAI+T

MAX3237EAI+T

Maxim Integrated

IC TRANSCEIVER FULL 5/3 28SSOP

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

FDN360P

FDN360P

ON Semiconductor

MOSFET P-CH 30V 2A SSOT3

LT8609SEV#PBF

LT8609SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16LQFN

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC