Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

For Reference Only

Part Number BSC014NE2LSIATMA1
PNEDA Part # BSC014NE2LSIATMA1
Description MOSFET N-CH 25V 33A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 297,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC014NE2LSIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC014NE2LSIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC014NE2LSIATMA1 Datasheet
  • where to find BSC014NE2LSIATMA1
  • Infineon Technologies

  • Infineon Technologies BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 PDF Datasheet
  • BSC014NE2LSIATMA1 Stock

  • BSC014NE2LSIATMA1 Pinout
  • Datasheet BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC014NE2LSIATMA1 Price
  • BSC014NE2LSIATMA1 Distributor

BSC014NE2LSIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

The Products You May Be Interested In

TSM60N600CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

743pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

BSZ035N03LSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

IRFH4209DTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FASTIRFET™, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

44A (Ta), 260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4620pF @ 13V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

IRF3717TRPBF-1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

BSS214NL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

0001.2536

0001.2536

Schurter

FUSE CER 16A 250VAC 63VDC 3AB

S29AL016J70TFI020

S29AL016J70TFI020

Cypress Semiconductor

IC FLASH 16M PARALLEL 48TSOP

MMSZ7V5T1G

MMSZ7V5T1G

ON Semiconductor

DIODE ZENER 7.5V 500MW SOD123

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

FDN360P

FDN360P

ON Semiconductor

MOSFET P-CH 30V 2A SSOT3

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

BAV70

BAV70

Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP

MAX1953EUB+

MAX1953EUB+

Maxim Integrated

IC REG CTRLR BUCK 10UMAX

HCPL-3700-500E

HCPL-3700-500E

Broadcom

OPTOISOLATOR 3.75KV DARL 8DIP GW