Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

For Reference Only

Part Number BSC014NE2LSIATMA1
PNEDA Part # BSC014NE2LSIATMA1
Description MOSFET N-CH 25V 33A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 297,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC014NE2LSIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC014NE2LSIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC014NE2LSIATMA1 Datasheet
  • where to find BSC014NE2LSIATMA1
  • Infineon Technologies

  • Infineon Technologies BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 PDF Datasheet
  • BSC014NE2LSIATMA1 Stock

  • BSC014NE2LSIATMA1 Pinout
  • Datasheet BSC014NE2LSIATMA1
  • BSC014NE2LSIATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC014NE2LSIATMA1 Price
  • BSC014NE2LSIATMA1 Distributor

BSC014NE2LSIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

The Products You May Be Interested In

BSZ035N03LSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

BSS214NL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRF3717TRPBF-1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NILMS4501NR2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 6V

FET Feature

Current Sensing

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-PLLP

Package / Case

4-PowerDFN

Manufacturer

IXYS

Series

HiperFET™, TrenchT3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

270A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12600pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

DMF3Z5R5H474M3DTA0

DMF3Z5R5H474M3DTA0

Murata

CAP SUPER 470MF 5.5V 3-SMD

FQD3P50TM

FQD3P50TM

ON Semiconductor

MOSFET P-CH 500V 2.1A DPAK

TVS4201MR6T1G

TVS4201MR6T1G

ON Semiconductor

TVS DIODE 5V 12V 6TSOP

ADP1763ACPZ-R7

ADP1763ACPZ-R7

Analog Devices

IC REG LINEAR POS ADJ 3A 16LFCSP

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

EPM7128STC100-15N

EPM7128STC100-15N

Intel

IC CPLD 128MC 15NS 100TQFP

1SMB36AT3G

1SMB36AT3G

Littelfuse

TVS DIODE 36V 58.1V SMB

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

MIC2544A-1YMM

MIC2544A-1YMM

Microchip Technology

IC SW CURR LIMIT HI SIDE 8MSOP

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

EC3SA-12S15N

EC3SA-12S15N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

DS1500WE+

DS1500WE+

Maxim Integrated

IC RTC CLK/CALENDAR PAR 32-TSOP