Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC017N04NSGATMA1

BSC017N04NSGATMA1

For Reference Only

Part Number BSC017N04NSGATMA1
PNEDA Part # BSC017N04NSGATMA1
Description MOSFET N-CH 40V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 38,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC017N04NSGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC017N04NSGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC017N04NSGATMA1 Datasheet
  • where to find BSC017N04NSGATMA1
  • Infineon Technologies

  • Infineon Technologies BSC017N04NSGATMA1
  • BSC017N04NSGATMA1 PDF Datasheet
  • BSC017N04NSGATMA1 Stock

  • BSC017N04NSGATMA1 Pinout
  • Datasheet BSC017N04NSGATMA1
  • BSC017N04NSGATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC017N04NSGATMA1 Price
  • BSC017N04NSGATMA1 Distributor

BSC017N04NSGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs108nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8800pF @ 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

32mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

-

Power Dissipation (Max)

380mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3

AUIRF4905S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AOD2610_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

PSMN005-75B,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8250pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTF3055-160T1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE

SRR0735A-100M

SRR0735A-100M

Bourns

FIXED IND 10UH 2.1A 72 MOHM SMD

PS2805-1-A

PS2805-1-A

CEL

OPTOISOLATOR 2.5KV TRANS 4SOIC

1.5KE33A

1.5KE33A

ON Semiconductor

TVS DIODE 28.2V 45.7V AXIAL

EP3C16F484I7N

EP3C16F484I7N

Intel

IC FPGA 346 I/O 484FBGA

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

BAT54CXV3T1G

BAT54CXV3T1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SC89-3

BC807-16,215

BC807-16,215

Nexperia

TRANS PNP 45V 0.5A SOT23

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

A750KS337M1EAAE018

A750KS337M1EAAE018

KEMET

CAP ALUM POLY 330UF 20% 25V T/H

IRM-20-24

IRM-20-24

MEAN WELL

AC/DC CONVERTER 24V 22W