BSC016N03LSGATMA1
For Reference Only
| Part Number | BSC016N03LSGATMA1 |
| PNEDA Part # | BSC016N03LSGATMA1 |
| Description | MOSFET N-CH 30V 100A TDSON8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSC016N03LSGATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSC016N03LSGATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSC016N03LSGATMA1 Datasheet
- where to find BSC016N03LSGATMA1
- Infineon Technologies
- Infineon Technologies BSC016N03LSGATMA1
- BSC016N03LSGATMA1 PDF Datasheet
- BSC016N03LSGATMA1 Stock
- BSC016N03LSGATMA1 Pinout
- Datasheet BSC016N03LSGATMA1
- BSC016N03LSGATMA1 Supplier
- Infineon Technologies Distributor
- BSC016N03LSGATMA1 Price
- BSC016N03LSGATMA1 Distributor
BSC016N03LSGATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 131nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 149A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 25mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 364nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 17500pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Module Package / Case J3 Module |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75A Package / Case SC-75A |
Manufacturer Toshiba Semiconductor and Storage Series π-MOSVII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 525V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 580mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 272W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-5 Package / Case TO-220-5 |
