Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1048/2164

Part Number	Description	In Stock
BSC036NE7NS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 63.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 37.5V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock76,056
BSC037N025S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock3,834
BSC037N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock4,068
BSC039N06NSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 19A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock6,516
BSC040N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 67µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock7,470
BSC040N10NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 50V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock189,852
BSC042N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 93A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock37,914
BSC042N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 93A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock4,608
BSC042N03S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 95A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock4,482
BSC042N03ST Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock3,436
BSC042NE7NS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 37.5V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock5,976
BSC046N02KSGAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 80A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 27.6nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock8,478
BSC046N10NS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock5,274
BSC047N08NS3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock4,842
BSC048N025S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 89A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	In Stock7,200
BSC0500NSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock7,956
BSC0501NSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 29A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock4,626
BSC0502NSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock47,742
BSC0503NSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock3,544
BSC0504NSIATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock6,408
BSC050N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock263,916
BSC050N03MSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock2,286
BSC050N04LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 85A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock680,022
BSC050N10NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single TRENCH >=100V Manufacturer: Infineon Technologies Series: OptiMOS™ 5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.8V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock7,470
BSC050NE2LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 39A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock256,812
BSC052N03LSATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock75,984
BSC052N03S G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	In Stock7,128
BSC052N08NS5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 95A 8TDSON Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	In Stock7,272
BSC054N04NSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 81A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock257,694
BSC057N03LSGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 71A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	In Stock2,754

«
‹
1
...
1045
1046
1047
1048 (current)
1049
1050
1051
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message