JANTXV2N6798

For Reference Only
Part Number | JANTXV2N6798 | ||||||||||||||||||
PNEDA Part # | JANTXV2N6798 | ||||||||||||||||||
Description | MOSFET N-CH | ||||||||||||||||||
Manufacturer | Microsemi | ||||||||||||||||||
Unit Price |
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In Stock | 422 | ||||||||||||||||||
Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) | ||||||||||||||||||
Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTXV2N6798 Resources
Brand | Microsemi |
ECAD Module |
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Mfr. Part Number | JANTXV2N6798 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Notes
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JANTXV2N6798 Specifications
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/557 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 42.07nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Package / Case | TO-205AF Metal Can |
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