Infineon Technologies Transistors - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 67/225
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 750V 7.4A SOT223 |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 750V | 7.4A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9nC @ 10V | ±20V | 328pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
|
|
|
Infineon Technologies |
TRANSISTOR P-CH BARE DIE |
3,762 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 13A 8PQFN |
3,762 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
CONSUMER |
3,078 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 40A TDSON-8 |
3,780 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 40A (Tc) | 4.5V, 10V | 9.1mOhm @ 20A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 16A 8PQFN |
3,006 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta) | 4.5V, 10V | 7.7mOhm @ 20A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 10V | - | 3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
5,940 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | 2.1V @ 12µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1.4A 6TSOP |
6,804 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.4A (Ta) | 4.5V, 10V | 460mOhm @ 1.26A, 10V | 1.8V @ 100µA | 4nC @ 5V | ±20V | 152.7pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 2A 6TSOP |
3,906 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 10V | 230mOhm @ 2A, 10V | 4V @ 218µA | 9.3nC @ 10V | ±20V | 265pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT223 |
7,470 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3nC @ 7V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET NCH 700V 5.4A TO251 |
3,490 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
LV POWER MOS |
4,986 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHAN SAWED WAFER |
3,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 90A 5X6 PQFN |
8,874 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | ±20V | 2380pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 2A SAWN ON FOIL |
4,212 |
|
OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 30V | - | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 1.5A DPAK |
6,462 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4nC @ 10V | ±20V | 80pF @ 500V | Super Junction | 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 18A TDSON-8 |
3,834 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 44mOhm @ 12A, 10V | 3.5V @ 12µA | 10.8nC @ 10V | ±20V | 810pF @ 50V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 30V 13A 8TDSON |
3,582 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 7mOhm @ 5A, 10V | 2V @ 250µA | 7nC @ 4.5V | ±20V | 890pF @ 15V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-25 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4.3A TO-251-3 |
7,668 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 61W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
CONSUMER |
5,886 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
7,380 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1020pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
5,886 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | ±20V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN |
3,454 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-252 |
7,794 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 10A PQFN |
5,562 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.2A (Ta), 20A (Tc) | 10V | 115mOhm @ 6.3A, 10V | 4V @ 35µA | 26nC @ 10V | ±20V | 760pF @ 50V | - | 2.8W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,294 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 400mOhm @ 4.3A, 10V | 4V @ 166µA | 6.7nC @ 10V | ±20V | 260pF @ 30V | - | 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
2,664 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 250mOhm @ 1.9A, 10V | 4V @ 270µA | 10.8nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
2,574 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
CONSUMER |
6,750 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
CONSUMER |
8,550 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |