IPD60R2K0C6ATMA1
For Reference Only
| Part Number | IPD60R2K0C6ATMA1 |
| PNEDA Part # | IPD60R2K0C6ATMA1 |
| Description | MOSFET N-CH 600V TO252 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,452 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD60R2K0C6ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD60R2K0C6ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD60R2K0C6ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 22.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 8mOhm @ 51A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 15V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3540pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 25V FET Feature - Power Dissipation (Max) 132W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
