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IPD060N03LGBTMA1

IPD060N03LGBTMA1

For Reference Only

Part Number IPD060N03LGBTMA1
PNEDA Part # IPD060N03LGBTMA1
Description MOSFET N-CH 30V 50A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD060N03LGBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD060N03LGBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD060N03LGBTMA1, IPD060N03LGBTMA1 Datasheet (Total Pages: 12, Size: 1,021.05 KB)
PDFIPU060N03L G Datasheet Cover
IPU060N03L G Datasheet Page 2 IPU060N03L G Datasheet Page 3 IPU060N03L G Datasheet Page 4 IPU060N03L G Datasheet Page 5 IPU060N03L G Datasheet Page 6 IPU060N03L G Datasheet Page 7 IPU060N03L G Datasheet Page 8 IPU060N03L G Datasheet Page 9 IPU060N03L G Datasheet Page 10 IPU060N03L G Datasheet Page 11

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IPD060N03LGBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2300pF @ 15V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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